THE WINDOW THICKNESS OF DIFFUSED JUNCTION DETECTORS
The detector window thicknesses for carrier gas diffusions were found to be very close to 1/2 the diffusion depths. This result is interpreted in terms of the concentration profile of the diffusant. In the surface region, where the impurity concentration is greater than 1O/sup 18/ per cc, the carrier lifetime becomes so small that ionized charges recombine before they can diffuse to the junction. With reduced surface concentrations, window thicknesses of less than 1/ 2 the diffusion depth were fabricated, but good voltage rating diodes with a window thickness of less than O.1 micron (0.025 mg/cm/sup 2/) are yet to be realized. For all diffusion depths, a non-noise resolution limit of devices was observed which corresponds to approximately 1/3 the energy loss of an incident particle in the window layer of diodes. For paint-on diffusion detectors, the nominal 900 deg C-- 10 minutes--O.1 microns diffusion units have measured window thicknesses of about 0.3 microns. For the process studied it appears that an excessive amount of phosphorus is incorporated into the surface layer. (auth)
- Research Organization:
- RCA Victor Research Labs., Montreal
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-16-023897
- OSTI ID:
- 4829621
- Journal Information:
- IRE Trans. on Nuclear Sci. NS-9, Journal Name: IRE Trans. on Nuclear Sci. NS-9 Vol. Vol: No. 3
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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