SILICON p-n JUNCTION RADIATION DETECTORS
ABS>Silicon p-n junction particle detectors were fabricated by diffusing phosphorus to various depths between 0.1 and 2.0 mu into high resistivity p type silicon. Various base material resistivities were employed, ranging from 100 to 13,000 OMEGA cm. Diffusions were carried out both by the "gaseous" and the "paint-on" processes. The devices produced ranged in area from 1 mm/sup 2/ to 1 cm/sup 2/, with the majority of detectors having an area of approximately 0.2 cm/sup 2/. Using 5.5 Mev alpha particles and a 5 x 5 mm device, the best line width that was obtained was 20 kev. It was found that the 1 cm/sup 2/ devices gave line widths of approximately 50 kev. The effect of the thickness of the n layer forming the front surface of the junction was investigated, and it was shown that 0.1- mu diffusions gave essentially "windowless" detectors. Other properties examined were space-charge generation of leakage current, charge collection efficiency as a function of bias and incident particle direction, and signal rise time. (auth)
- Research Organization:
- Brookhaven National Lab., upton, N.Y.
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-14-025717
- OSTI ID:
- 4128029
- Journal Information:
- IRE Trans. Nuclear Sci., Journal Name: IRE Trans. Nuclear Sci. Vol. Vol: NS-7, No. 2-3
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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