SILICON JUNCTIONS DETECT PARTICLES

Journal Article · Thu Apr 21 23:00:00 EST 1960 · Electronics (U.S.)

OSTI ID:4193576

A program was initiated for research and development of silicon pn junctions as particle detectors. The results of collection tests on carriers diffused through the dead layer agree with time-of-flight measurements within the accuracy of both methods. The expected rise time was 2 nsec, and the actual rise time was 1.5 nsec for the system. Rise time for fission fragments was 10 nsec, well beyond experimental error. The detectors were made up to 1 cm/sup 2/ in area, with depletion thicknesses to 0.7 mm, negligible dead layers, and exhibited line widths down to 20 kev. (B.O.G.)

• Research Organization: Originating Research Org. not identified
• NSA Number: NSA-14-012718
• OSTI ID: 4193576
• Journal Information: Electronics (U.S.), Journal Name: Electronics (U.S.) Vol. Vol: 33, No. 17; ISSN ELECA
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

ALUMINUM SILICATES
ANNEALING
CATALYSIS
CONFIGURATION
CRACKS
ENGINEERING AND EQUIPMENT
ERRORS
FILMS
FISSION PRODUCTS
HYDROGEN
MEASURED VALUES
POROSITY
PULSES
RADIATION DETECTORS
SEMICONDUCTORS
SENSITIVITY
SILICON
SURFACES
TEMPERATURE
TESTING
THERMAL UTILIZATION
THICKNESS
TIME OF FLIGHT METHOD
VELOCITY
WEAR