IMPROVEMENTS IN ENCAPSULATED SILICON JUNCTION ALPHA DETECTORS

Journal Article · Sun Jan 01 04:00:00 EST 1961 · IRE Trans. Nuclear Sci.

DOI:https://doi.org/10.1109/TNS2.1961.4315795· OSTI ID:4100271

Jackson, R W; Webb, P P; Williams, R L

Encapsulated silicon junction alpha detectors made with material of resistivity 1000 ohm-cm and with front layer depth of 2 - are available in window areas of 5, 20, and 200 mm/sup 2/. Recent measurements on the best of these units gave resolutions of 0.6, 0.9, and 4% for 5.5-Mev alpha particles. For wider application, similar units were made with front layer depth of 0.2 - and using matrrial of resistivity up to 30,000 ohm-cm. Excitation of carriers by radiation of optical wavelengths showed that the effective dead layer is less than 0.03 - . The necessity of making a solder contact and seal to the extremely thin front layer raised problems in the achievements of high stability, low leakage, and low noise at high voltages. Thus the depletion layer depths obtainable in encapsulated units with high resistivity material do not yet approach those obtainable in unencapsulated units in vacuum. A representative measurement obtained recently gave a resolution of 0.6% with a window area of 5 mm/sup 2/ (junction area 20 mm/sup 2/) and depletion layer depth of 180 - . (auth)

• Research Organization: RCA Victor Co., Ltd., Montreal
• Sponsoring Organization: USDOE
• NSA Number: NSA-15-009080
• OSTI ID: 4100271
• Journal Information: IRE Trans. Nuclear Sci., Journal Name: IRE Trans. Nuclear Sci. Vol. Vol: NS-8: No. 1
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

ALPHA DETECTION
BACKGROUND
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ENGINEERING AND EQUIPMENT
LAYERS
LIGHT
MEASURED VALUES
SEALS
SEMICONDUCTORS
SILICON
SURFACES
VACUUM
WINDOWS