SOLID STATE PARTICLE DETECTORS
Technical Report
·
OSTI ID:4730641
The properties of the p-n junction and how it detects ionizing radiation are discussed. The types of semiconductor detectors in use and some of the techniques involved in their fabrication are described. The intrinsic semiconductor, impurity semiconductor, p-n junction, surface-barrier junction, diffused junction detector, lithium drifted detector, and surface-barrier detector are discussed. Advantages over other types of detectors are listed. (M.C.G.)
- Research Organization:
- Argonne National Lab., Ill.
- DOE Contract Number:
- W-31109-ENG-38
- NSA Number:
- NSA-17-011009
- OSTI ID:
- 4730641
- Report Number(s):
- TID-16206; UAC-6421
- Country of Publication:
- United States
- Language:
- English
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