Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

SEMICONDUCTOR DETECTORS--THEIR PROPERTIES AND APPLICATIONS

Journal Article · · Nucleonics (U.S.) Ceased publication
OSTI ID:4010911

Basic detector and system information is collected. Advantages of semiconductor over gas or scintillation detectors are given. Sensitive thickness and signal-to-noise ratio are discussed. Types of detectors --- silicon-diffused junction, surface barrier, lithium-drifted silicon and germanium--- are reviewed. Requirements of detectoramplifier systems are discussed, and circuit diagrams are given. Examples of the use of the various criteria for instrumentation choice are given for studies of fission fragments, high-energy reactions, alpha decay, beta spectrometry, and conversion electrons. (M.J.T.)

Research Organization:
Univ. of California, Berkeley
NSA Number:
NSA-18-020376
OSTI ID:
4010911
Journal Information:
Nucleonics (U.S.) Ceased publication, Journal Name: Nucleonics (U.S.) Ceased publication Vol. Vol: 22: No. 5; ISSN NUCLA
Country of Publication:
Country unknown/Code not available
Language:
English

Similar Records

COMMERCIALLY AVAILABLE SEMICONDUCTOR DETECTORS AND PREAMPLIFIERS
Journal Article · Fri May 01 00:00:00 EDT 1964 · Nucleonics (U.S.) Ceased publication · OSTI ID:4014294

Radiation damage of semiconductor detectors
Journal Article · Sun Dec 31 23:00:00 EST 1972 · Radioisotopes (Tokyo), v. 22, no. 1, pp. 29-38 · OSTI ID:4328812

SEMICONDUCTOR JUNCTION BARRIER DETECTORS FOR IONIZING RADIATION
Journal Article · Sun Dec 31 23:00:00 EST 1961 · Postepy Fizyki (Poland) · OSTI ID:4769790