Radiation damage of semiconductor detectors (in Japanese)
Research on the eadiation damage of semiconductor detectors is reviewed, referring to the mechanism of radiation damage. The first chapter describes radiation damage of silicon and germanium and covers characteristics of the damage in accordance with the kinds of radiation, i.e., electrons, alpha particles, protons, gamma, fission fragnnents and neutrons, besides, lattice defects produced by the radiation. The second chapter describes the radiation damage of the semiconductor detectors, and covers the silicon detectors of surface barrier type including p-n junction type, the silicon detectors of lithium drifted type and the germaniunn detectors of lithium drifted type. Further, the review illustrates distribution of Frenkel defects along the path of alpha particles in silicon, distribution of energy loss of light fission fragments, energy level of each defect due to the diation damage, distribution of pulse height of the silicon detors of surface barrier tyne by the action of alpha particles m ThC and ThC' before and after the irradiation with 2-MeV otons, variation of resolving power of/sup 241/ alpha particle in contrast to the radiation dose of 4.5 MeV alpha particles, comparison of noise level in cases of the irradiation from front and back surfaces of 200 keV and 800 keV protons in the silicon detectors of surface barrier type, effect of the increment DELTA Ep of the ionization defects produced by the radiation damage due to fission fragments in relation to the electric field of the detectors, distribution of output pulse hcight with/sup 60/Co gamma ray in case of the irradiation of 5.75 MeV neutrons on a Ge (Li) detector, and the like. (JA)
- Research Organization:
- Waseda Univ., Tokyo
- NSA Number:
- NSA-29-021041
- OSTI ID:
- 4328812
- Journal Information:
- Radioisotopes (Tokyo), v. 22, no. 1, pp. 29-38, Journal Name: Radioisotopes (Tokyo), v. 22, no. 1, pp. 29-38; ISSN RAISA
- Country of Publication:
- Japan
- Language:
- Japanese
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