NUCLEAR RADIATION DAMAGE TO TRANSISTORS. VOLUME I: PERMANENT DAMAGE. PART 1: DATA

Technical Report · Mon Nov 27 04:00:00 EST 1961

OSTI ID:4814889

Puttcamp, R

Permanent damage data (including graphical and tabular results) are presented on 18 types of transistors. Germanium and silicon (PNP and NPN) junction transistors and a germanium surface-barrier type transistor are covered. The units are irradiated in a fast neutron environment and are observed for effects on small-signal beta and collector leakage current. The results indicate that the amount of induced permanent damage is directly proportional to the power rating of the transistor, and inversely proportional to the alpha-cutoff frequency. (auth)

• Research Organization: Diamond Ordnance Fuze Labs., Washington, D.C.
• NSA Number: NSA-16-009254
• OSTI ID: 4814889
• Report Number(s): DOFL-TR-975(Vol.I, Pt.1)
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

CURRENTS
DEFECTS
DISTRIBUTION
FAST NEUTRONS
FREQUENCY
IRRADIATION
LOSSES
METALS, CERAMICS, AND OTHER MATERIALS
NEUTRON BEAMS
POWER
RADIATION EFFECTS
SEMICONDUCTORS
TRANSISTORS