RADIATION DAMAGE TO TRANSISTORS

Technical Report · Mon Dec 01 04:00:00 EST 1958

OSTI ID:4275056

Hicks, D A; Keller, D V; Robison, J B; Durkee, R K; Orr, J R; Clarke, B M

Studies of the radiation damage to 23 transistor types have been carried out utilizing the Los Alamos critical assembly (Godiva II), The Materials Testing Reactor at Arco, and the University of Washington cyclotron. The transistor types included all power and frequency ranges for both silicon and germanium transistors. Neutron dosimetry was performed at each site and all transistors were pedigreed before and after irradiation by the Philco transistor laboratory. Plots are given showing tbe changes in the 1/ beta vs. I/sub e/ curves, and the I/sub co/vs. temperature curves, as a function of the number of neutrons received per square centimeter. In addition, the collector characteristics are given in the low emitter current region for several neutron fluxes. The damage constant (K) for each transistor type was determined. The average values are 4.2 plus or minus 0.21 x 10/sup 13/ nvt- mu sec for n-base germanium, (1.8 plus or minus 0.2) x 10/sup 13/ nvt- mu sec for p-base germanium, (3.1 plus or minus 0.4) x 10/sup 12/ nvt- mu sec for n-base silicon, and (4.6 plus or minus 3.3) x 10/sup 12/ nvt- mu sec for p-base silicon. Larger K indicates smaller susceptibility to permanent radiation damage. (auth)

• Research Organization: Boeing Airplane Co., Seattle
• NSA Number: NSA-13-008199
• OSTI ID: 4275056
• Report Number(s): D5-2880
• Country of Publication: United States
• Language: English

Related Subjects

CRITICAL ASSEMBLIES
CURRENTS
CYCLOTRONS
ELECTRIC CONDUCTIVITY
GODIVA-2
MTR
RADIATION DOSES
RADIATION EFFECTS
RADIATION EFFECTS ON MATERIALS
REACTORS
SEMICONDUCTORS
TEMPERATURE
TRANSISTORS