Here, this study investigates neutron-induced displacement damage in Bipolar Junction Transistors (BJTs) using TCAD models informed by Deep-Level-Transient-Spectroscopy (DLTS) data. These models are calibrated and validated against experimental measurements performed at various neutron fluences. Both npn and pnp transistor configurations are studied to analyze the effects of individual traps on carrier recombination and base leakage currents. In npn transistors, deep traps (0.42 eV from the conduction band) dominate at low voltages, while shallow traps (0.17 eV from the conduction band) become prominent at higher voltages. Conversely, pnp transistors have base leakage current predominantly due to deep-level traps. The study observes a notable trend in trap density versus fluence, characterized by a linear relationship on a log-log scale. These insights into defect evolution under radiation conditions are crucial for optimizing semiconductor device reliability and performance in radiation-prone environments.
Banerjee, Sneha, Gao, Xujiao, Young, Joshua M., et al., "Investigating the Effects of Individual Neutron-Induced Defects in Bipolar Junction Transistors," IEEE Transactions on Nuclear Science 72, no. 4 (2024), https://doi.org/10.1109/tns.2024.3504375
@article{osti_2517901,
author = {Banerjee, Sneha and Gao, Xujiao and Young, Joshua M. and Ho, Le Thanh Triet and Musson, Lawrence and Barnaby, Hugh and Buchheit, Thomas},
title = {Investigating the Effects of Individual Neutron-Induced Defects in Bipolar Junction Transistors},
annote = {Here, this study investigates neutron-induced displacement damage in Bipolar Junction Transistors (BJTs) using TCAD models informed by Deep-Level-Transient-Spectroscopy (DLTS) data. These models are calibrated and validated against experimental measurements performed at various neutron fluences. Both npn and pnp transistor configurations are studied to analyze the effects of individual traps on carrier recombination and base leakage currents. In npn transistors, deep traps (0.42 eV from the conduction band) dominate at low voltages, while shallow traps (0.17 eV from the conduction band) become prominent at higher voltages. Conversely, pnp transistors have base leakage current predominantly due to deep-level traps. The study observes a notable trend in trap density versus fluence, characterized by a linear relationship on a log-log scale. These insights into defect evolution under radiation conditions are crucial for optimizing semiconductor device reliability and performance in radiation-prone environments.},
doi = {10.1109/tns.2024.3504375},
url = {https://www.osti.gov/biblio/2517901},
journal = {IEEE Transactions on Nuclear Science},
issn = {ISSN 0018-9499},
number = {4},
volume = {72},
place = {United States},
publisher = {IEEE},
year = {2024},
month = {11}}
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 377, Issue 2-3https://doi.org/10.1016/0168-9002(95)01405-5
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 388, Issue 3https://doi.org/10.1016/S0168-9002(97)00002-8