Low-Frequency Noise and Deep Level Transient Spectroscopy in n-p-n Si Bipolar Junction Transistors Irradiated with Si Ions

Journal Article · Mon Dec 25 00:00:00 EST 2023 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/tns.2023.3346834· OSTI ID:2320338

Luo, Xuyi  ^[1]; Montes, Jossue ^[2]; Koukourinkova, Sabina Dimtcheva  ^[2]; Vaandrager, Bastiaan Leendert ^[2]; Bielejec, Edward Salvatore  ^[2]; Vizkelethy, Gyorgy  ^[2]; Schrimpf, Ronald D.  ^[1]; Fleetwood, Daniel M.  ^[1]; Zhang, En Xia  ^[3]

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1. Vanderbilt University, Nashville, TN (United States)
2. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
3. University of Central Florida, Orlando, FL (United States)

The properties of defects in n-p-n Si bipolar junction transistors (BJTs) caused by 17 MeV Si ions are investigated via current-voltage, low-frequency noise, and deep-level transient spectroscopy (DLTS) measurements. Four prominent radiation-induced defects in the base-collector junction of these transistors are identified via DLTS. At least two defect levels are observed in temperature-dependent low-frequency 1/ f noise measurements, one that is similar to a prominent defect in DLTS and another that is not. Defect microstructures are discussed. Here our results show that DLTS and 1/ f noise measurements can provide complementary information about defects in linear bipolar devices.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: NA0003525
• OSTI ID: 2320338
• Report Number(s): SAND-2024-02757J
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 1, Issue 1; ISSN 0018-9499
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
bipolar transistors
defects
DLTS
displacement damage
low-frequency noise