Single-event burnout of epitaxial bipolar transistors
Journal Article
·
· IEEE Transactions on Nuclear Science
- National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan)
- Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan)
Single-Event Burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs, including small signal transistors, with thinner epitaxial layers were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified.
- OSTI ID:
- 323929
- Report Number(s):
- CONF-980705--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 45; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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