Numerical analysis of single event burnout of power MOSFETs

Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6840012

Kuboyama, Satoshi; Matsuda, Sumio; Nakajima, Masato; Kanno, Tooru ^[1]; Ishii, Takayuki ^[2]

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1. National Space Development Agency of Japan, Ibaraki (Japan). Tsukuba Space Center
2. Ryoei Technica Corp., Ibaraki (Japan)

Single event burnout (SEB) phenomenon of power MOSFETs has been analyzed using a numerical device simulator code. The results were compared with experimental data. It was identified that the current flow along the incident ion track could trigger SEB. It was also found that the regenerative feedback mechanism could be attributable to the avalanche multiplication near the p-body/drain junction.

• OSTI ID: 6840012
• Report Number(s): CONF-930704--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:6Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COMPARATIVE EVALUATIONS
COMPUTERIZED SIMULATION
DATA
ENERGY TRANSFER
EVALUATION
FAILURES
FIELD EFFECT TRANSISTORS
INFORMATION
LET
MOS TRANSISTORS
MOSFET
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SIMULATION
SPACE FLIGHT
THEORETICAL DATA
TRANSISTORS