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Single-event burnout of power bipolar junction transistors

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:5825989
 [1]; ; ;  [2]
  1. Naval Weapons Support Center, Crane, IN (United States)
  2. Arizona Univ., Tucson, AZ (United States). Dept. of Electrical and Computer Engineering
Experimental evidence of single-event burnout of power bipolar junctions transistors (BJTs) is reported for the first time. Several commercial power BJTs were characterized in a simulated cosmic ray environment using mono-energetic ions at the tandem Van de Graaff accelerator facility at Brookhaven National Laboratory. Most of the device types exposed to this simulated environment exhibited burnout behavior. In this paper the experimental technique, data, and results are presented, while a qualitative model is used to help explain those results and trends observed in this experiment.
OSTI ID:
5825989
Report Number(s):
CONF-910751--
Conference Information:
Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 38:6
Country of Publication:
United States
Language:
English