Radiation and Self Heating Effects in Hetero-Junction Bipolar Transistors (FY2019 L2 MileStone 6723 Report)

Technical Report · Sat Nov 30 23:00:00 EST 2019

DOI:https://doi.org/10.2172/1592871· OSTI ID:1592871

Hembree, Charles E. ^[1]; Robertson, Perry J. ^[1]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Hetero-Junction Bipolar Transistors (HBT) have several advantages over Silicon Bipolar Junction Transistors (BJT) in radiation environments. One advantage is an intrinsic hardness to displacement damage causing radiation. The generally smaller size of HBTs compared to BJTs also means that less photocurrent is generated by these devices. A disadvantage of the smaller size is less ability to dissipate heat due to smaller surface areas and contacts. This report describes simulations intended to study the initial heating of HBT transistors due to ionizing radiation events and the subsequent heating caused by feedback in the devices when responding to these events.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000; NA0003525
• OSTI ID: 1592871
• Report Number(s): SAND--2019-15109; 682024
• Country of Publication: United States
• Language: English

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