SELECTING TRANSISTORS FOR RADIATION ENVIRONMENTS
Journal Article
·
· Electronics (U.S.)
OSTI ID:4194731
Nomographs are presented which can be used to determine the percentage change in grounded emitter current gain of germanium and silicon npn and pnp transistors neutron flux. Equations are given to calculate the effect of radiation on the volume recombination term and the change in transistor current gain as a function of neutron flux. (C.J. G.)
- Research Organization:
- General Electric Co., Ithaca, N.Y.
- NSA Number:
- NSA-14-004445
- OSTI ID:
- 4194731
- Journal Information:
- Electronics (U.S.), Journal Name: Electronics (U.S.) Vol. Vol: 32, No. 52; ISSN ELECA
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Similar Records
NUCLEAR RADIATION DAMAGE TO TRANSISTORS. VOLUME I: PERMANENT DAMAGE. PART 1: DATA
ON THE NEUTRON BOMBARDMENT REDUCTION OF TRANSISTOR CURRENT GAIN
RADIATION DAMAGE TO TRANSISTORS
Technical Report
·
Sun Nov 26 23:00:00 EST 1961
·
OSTI ID:4814889
ON THE NEUTRON BOMBARDMENT REDUCTION OF TRANSISTOR CURRENT GAIN
Journal Article
·
Wed Jun 01 00:00:00 EDT 1960
· Journal of Applied Physics (U.S.)
·
OSTI ID:4200888
RADIATION DAMAGE TO TRANSISTORS
Technical Report
·
Sun Nov 30 23:00:00 EST 1958
·
OSTI ID:4275056