MeV ion beam synthesis of well-defined buried 3C-SiC layers in silicon
Book
·
OSTI ID:477448
- Univ. Augsburg (Germany). Inst. fuer Physik
Well-defined, homogeneous, deep-buried 3C-SiC layers have been formed in silicon by ion beam synthesis using MeV C{sup +} ions. Layers are characterized by RBS/channeling, X-ray diffraction, x-sectional TEM and electron diffraction. The redistribution of implanted carbon atoms into a rectangular carbon depth distribution associated with a well-defined layer during the post-implantation anneal is shown to depend strongly on the existence of crystalline carbide precipitates in the as-implanted state.
- OSTI ID:
- 477448
- Report Number(s):
- CONF-951155--; ISBN 1-55899-299-5
- Country of Publication:
- United States
- Language:
- English
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