MeV ion beam synthesis of well-defined buried 3C-SiC layers in silicon

Book · Tue Dec 31 00:00:00 EST 1996

OSTI ID:477448

Lindner, J K.N.; Goetz, B; Frohnwieser, A; Stritzker, B ^[1]

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1. Univ. Augsburg (Germany). Inst. fuer Physik

Well-defined, homogeneous, deep-buried 3C-SiC layers have been formed in silicon by ion beam synthesis using MeV C{sup +} ions. Layers are characterized by RBS/channeling, X-ray diffraction, x-sectional TEM and electron diffraction. The redistribution of implanted carbon atoms into a rectangular carbon depth distribution associated with a well-defined layer during the post-implantation anneal is shown to depend strongly on the existence of crystalline carbide precipitates in the as-implanted state.

• OSTI ID: 477448
• Report Number(s): CONF-951155-; ISBN 1-55899-299-5; TRN: IM9724%%325
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Ion-solid interactions for materials modification and processing; Poker, D.B. [ed.] [Oak Ridge National Lab., TN (United States)]; Ila, D. [ed.] [Alabama A and M Univ., Normal, AL (United States)]; Cheng, Y.T. [ed.] [General Motors Corp., Warren, MI (United States)]; Harriott, L.R. [ed.] [AT and T Bell Labs., Murray Hill, NJ (United States)]; Sigmon, T.W. [ed.] [Arizona State Univ., Tempe, AZ (United States)]; PB: 923 p.; Materials Research Society symposium proceedings, Volume 396
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON CARBIDES
SILICON
ION IMPLANTATION
ION BEAMS
SYNTHESIS
CARBON IONS
EXPERIMENTAL DATA