Effects of thermal and athermal processing on the formation of buried SiC layers

Journal Article · Thu Jan 01 04:00:00 EST 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3054326· OSTI ID:21185961

Katharria, Y S; Kumar, Sandeep; Kanjilal, D ^[1]; Chauhan, Devki ^[2]; Ghatak, J; Bhatta, U; Satyam, P V ^[3]

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1. Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110 067 (India)
2. Department of Applied Physics, Aligarh Muslim University, Aligarh-202 002 (India)
3. Institute of Physics, Sachivalaya Marg, Bhubaneswar-751 005 (India)

In the present study, systematic investigations on 100 keV C ion implanted Si (100) substrates annealed subsequently at a temperature of 1000 deg. C for 2 h or athermally processed using 110 MeV Ni{sup 8+} ion irradiation have been performed. A detailed analysis using the techniques of x-ray diffraction, Fourier transform infrared spectroscopy, and transmission electron microscopy (TEM) at high resolutions is performed. The observations suggest the formation of cubic silicon carbide ({beta}-SiC) crystallites surrounded by an amorphous background in the samples thermally annealed at 1000 deg. C. However, ion irradiation did not influence the as-implanted layers to any significant extent. Various defects formed after annealing inside C implanted Si such as missing planes, edge dislocations, and grain boundaries during thermal crystallization are visualized through high resolution TEM.

• OSTI ID: 21185961
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 105; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CARBON IONS
CRYSTALLIZATION
EDGE DISLOCATIONS
FOURIER TRANSFORM SPECTROMETERS
FOURIER TRANSFORMATION
GRAIN BOUNDARIES
INFRARED SPECTRA
ION IMPLANTATION
KEV RANGE 100-1000
MEV RANGE 100-1000
NICKEL IONS
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
TIME DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION