keV- and MeV-ion beam synthesis of buried SiC layers in silicon
Book
·
OSTI ID:375936
- Univ. Augsburg (Germany). Inst. fuer Physik
Homogeneous, epitaxial buried layers of 3C-SiC have been formed in Si(100) and Si(111) by ion beam synthesis (IBS) using 180 keV high dose C ion implantation. It is shown that an annealing temperature of 1,250 C and annealing times of 5 to 10 h are sufficient to achieve well-defined Si/SiC/Si layer systems with abrupt interfaces. The influence of dose, annealing time and temperature on the layer formation is studied. The favorable dose is observed to be dependent on the substrate orientation. IBS using 0.8 MeV C ions resulted in a buried SiC precipitate layer of variable composition.
- OSTI ID:
- 375936
- Report Number(s):
- CONF-941144--; ISBN 1-55899-255-3
- Country of Publication:
- United States
- Language:
- English
Similar Records
MeV ion beam synthesis of well-defined buried 3C-SiC layers in silicon
Ion beam synthesis of SiC in silicon-on-insulator
SiC precipitate formation during high dose carbon implantation into silicon
Book
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:477448
Ion beam synthesis of SiC in silicon-on-insulator
Conference
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:621316
SiC precipitate formation during high dose carbon implantation into silicon
Book
·
Fri Oct 31 23:00:00 EST 1997
·
OSTI ID:541121