keV- and MeV-ion beam synthesis of buried SiC layers in silicon

Book · Sun Dec 31 00:00:00 EST 1995

OSTI ID:375936

Lindner, J K.N.; Frohnwieser, A; Rauschenbach, B; Stritzker, B ^[1]

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1. Univ. Augsburg (Germany). Inst. fuer Physik

Homogeneous, epitaxial buried layers of 3C-SiC have been formed in Si(100) and Si(111) by ion beam synthesis (IBS) using 180 keV high dose C ion implantation. It is shown that an annealing temperature of 1,250 C and annealing times of 5 to 10 h are sufficient to achieve well-defined Si/SiC/Si layer systems with abrupt interfaces. The influence of dose, annealing time and temperature on the layer formation is studied. The favorable dose is observed to be dependent on the substrate orientation. IBS using 0.8 MeV C ions resulted in a buried SiC precipitate layer of variable composition.

• OSTI ID: 375936
• Report Number(s): CONF-941144-; ISBN 1-55899-255-3; TRN: IM9642%%24
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994; Other Information: PBD: 1995; Related Information: Is Part Of Beam-solid interactions for materials synthesis and characterization; Jacobson, D.C. [ed.] [AT and T Bell Labs., Murray Hill, NJ (United States)]; Luzzi, D.E. [ed.] [Univ. of Pennsylvania, Philadelphia, PA (United States)]; Heinz, T.F. [ed.] [Columbia Univ., New York, NY (United States)]; Iwaki, Masaya [ed.] [Inst. of Physical and Chemical Research, Wako, Saitama (Japan)]; PB: 763 p.; Materials Research Society symposium proceedings, Volume 354
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON CARBIDES
SYNTHESIS
SILICON
ION IMPLANTATION
HETEROJUNCTIONS
TEMPERATURE RANGE 1000-4000 K
CRYSTAL DOPING
EXPERIMENTAL DATA
CARBON IONS