Ion beam synthesis of cubic-SiC layer on Si(111) substrate

Journal Article · Fri Sep 15 04:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2344813· OSTI ID:20884729

Maltez, R L; Oliveira, R M. de; Boudinov, H ^[1]

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1. Instituto de Fisica, UFRGS, C.P. 15051, 91501-970 Porto Alegre, Rio Grande do Sul (Brazil)

We have investigated SiC layers produced by ion beam synthesis on Si(111) substrates using different procedures. Bare Si(111) and SiO{sub 2}/Si(111) structures were implanted with carbon at 40 keV up to a fluence of 4x10{sup 17} cm{sup -2} at a temperature of 600 deg. C. Postimplantation annealing was carried out at 1250 deg. C for 2 h in pure O{sub 2} or Ar (with 1% of O{sub 2}). A SiC layer was synthesized for all the procedures involving annealing under Ar. However, for the samples annealed under pure O{sub 2} flux, only that employing implantation into the bare Si(111) resulted in SiC synthesis. Rutherford backscattering spectrometry shows that, after annealing, the stoichiometric composition is obtained. Transmission electron microscopy measurements demonstrate the synthesis of cubic-SiC layers that are completely epitaxial to the Si(111) substrate. However, there is a high density of nanometric twins, stacking faults, and also narrow amorphous inclusions of laminar shape between the crystalline regions. The procedure based on high temperature implantation through a SiO{sub 2} cap, etching the cap off, 1250 deg. C postimplantation annealing under Ar ambient (with 1% of O{sub 2}), and final etching has shown advantages from the point of view of surface flatness and increased layer thickness, keeping the same layer epitaxy and accurate composition.

• OSTI ID: 20884729
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 100; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CARBON
DEPOSITION
EPITAXY
ETCHING
ION BEAMS
ION IMPLANTATION
LAYERS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SILICON CARBIDES
SILICON OXIDES
STACKING FAULTS
STOICHIOMETRY
SUBSTRATES
SYNTHESIS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 1000-4000 K
TRANSMISSION ELECTRON MICROSCOPY