SiC precipitate formation during high dose carbon implantation into silicon

Book · Sat Nov 01 04:00:00 EST 1997

OSTI ID:541121

Lindner, J K.N.; Volz, K; Stritzker, B ^[1]

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1. Univ. Augsburg (Germany). Inst. fuer Physik

The formation of SiC precipitates during the high-dose implantation of carbon ions into Si(100) is studied by means of TEM for implantation conditions, which are suitable for the ion beam synthesis of buried SiC layers in silicon. It is observed that in crystalline silicon nm-sized epitaxially oriented 3C-SiC precipitates are formed which are almost identical in size, nearly independent of the depth and dose (4--9 {times} 10{sup 17} C{sup +}/cm{sup 2}). With increasing dose, it is mainly the density of precipitates which increases. Amorphization of the silicon host lattice leads to depth intervals with a strongly decreased density of oriented crystalline SiC precipitates. The irradiation induced formation of larger randomly oriented SiC crystallites is observed to occur in amorphized regions after prolonged implantation. Both the irradiation induced destruction and formation of SiC precipitates contribute to the generation of a nearly box-shaped precipitate density distribution at doses near the stoichiometry dose.

• OSTI ID: 541121
• Report Number(s): CONF-961202--; ISBN 1-55899-343-6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CARBON IONS
EXPERIMENTAL DATA
ION IMPLANTATION
MICROSTRUCTURE
PHYSICAL RADIATION EFFECTS
PRECIPITATION
RADIATION DOSES
SILICON
SILICON CARBIDES