SUBSTITUTIONAL DOPING DURING LOW-DOSE IMPLANTATION OF Bi AND Tl IONS IN Si AT 25$sup 0$C.
Journal Article
·
· Radiat. Eff., 1: 71-3(Jan. 1969).
- Research Organization:
- Chalk River Nuclear Labs., Ont.
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-23-042435
- OSTI ID:
- 4770935
- Journal Information:
- Radiat. Eff., 1: 71-3(Jan. 1969)., Other Information: Orig. Receipt Date: 31-DEC-69
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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Related Subjects
N33110* -Physics (Solid State)-Radiation Effects
ANISOTROPY
BISMUTH COMPOUNDS
BOMBARDMENT
CARRIERS
CATIONS
CRYSTAL DOPING
CRYSTALS
IMPURITIES
ION BEAMS
ION IMPLANTATION
LATTICES
MOTION
SEMICONDUCTORS
SILICON
THALLIUM COMPOUNDS
THALLIUM IONS/implantation in silicon
substitutional doping during low-dose
(E)
SILICON/ion implantation in
substitutional doping during bismuth and thallium
(E)
BISMUTH IONS/implantation in silicon
substitutional doping during low-dose
(E)
ANISOTROPY
BISMUTH COMPOUNDS
BOMBARDMENT
CARRIERS
CATIONS
CRYSTAL DOPING
CRYSTALS
IMPURITIES
ION BEAMS
ION IMPLANTATION
LATTICES
MOTION
SEMICONDUCTORS
SILICON
THALLIUM COMPOUNDS
THALLIUM IONS/implantation in silicon
substitutional doping during low-dose
(E)
SILICON/ion implantation in
substitutional doping during bismuth and thallium
(E)
BISMUTH IONS/implantation in silicon
substitutional doping during low-dose
(E)