Doping of In sub 0. 53 Ga sub 0. 47 As and In sub 0. 52 Al sub 0. 48 As by Si sup + and Be sup + ion implantation

Journal Article · Wed Jan 01 00:00:00 EST 1992 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.350745· OSTI ID:5551471

Hailemariam, E; Pearton, S J; Hobson, W S; Luftman, H S; Perley, A P ^[1]

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1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (United States)

The activation kinetics and diffusion characteristics of Si{sup +} and Be{sup +} ions implanted into InAlAs and InGaAs were investigated for rapid thermal annealing in the temperature range 600--900 {degree}C. The apparent activation energies for electrical activation of Be are 0.43{plus minus}0.03 eV in InAlAs and 0.38{plus minus}0.03 eV in InGaAs, and for Si are 0.58{plus minus}0.05 eV in InAlAs and 0.64{plus minus}0.06 eV in InGaAs. Higher activation efficiencies are obtained for both dopants in InGaAs relative to InAlAs and anomalously low activation for low dose Be implants is observed due to a lack of vacant sites for the Be to occupy. Extensive redistribution of Be after annealing at 750 {degree}C, 10 s is observed in both materials, whereas Si shows no motion even for annealing at 850 {degree}C.

• OSTI ID: 5551471
• Journal Information: Journal of Applied Physics; (United States), Vol. 71:1; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
ION IMPLANTATION
BERYLLIUM IONS
COLLISIONS
GALLIUM ARSENIDES
INDIUM ARSENIDES
SILICON IONS
ACTIVATION ENERGY
ANNEALING
CRYSTAL DOPING
DIFFUSION
KEV RANGE 10-100
KEV RANGE 100-1000
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
ENERGY
ENERGY RANGE
GALLIUM COMPOUNDS
HEAT TREATMENTS
INDIUM COMPOUNDS
IONS
KEV RANGE
PNICTIDES
665300* - Interactions Between Beams & Condensed Matter- (1992-)