EVIDENCE OF A REPLACEMENT REACTION BETWEEN ION IMPLANTED SUBSTITUTIONAL Tl DOPANTS AND INTERSTITIAL Si ATOMS.
Journal Article
·
· Radiat. Eff., 1: 249-56(Sept. 1969).
- Research Organization:
- Research Inst. for Physics, Stockholm
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-24-001479
- OSTI ID:
- 4745403
- Journal Information:
- Radiat. Eff., 1: 249-56(Sept. 1969)., Other Information: Orig. Receipt Date: 31-DEC-70
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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Related Subjects
N33110* -Physics (Solid State)-Radiation Effects
ANISOTROPY
ARSENIC
BOMBARDMENT
CARBON
CARRIERS
CHEMICAL REACTIONS
CRYSTAL DOPING
CRYSTALS
DEFECTS
IMPURITIES
INTERSTITIALS
ION BEAMS
ION CHANNELING
ION IMPLANTATION
LATTICES
MOTION
SILICON
TEMPERATURE
THALLIUM
SILICON/reactions between implanted substitutional thallium and silicon interstitials in
channeling study of replacement
(E)
THALLIUM/reactions between silicon interstitials and implanted substitutional
channeling study of replacement
(E)
ANISOTROPY
ARSENIC
BOMBARDMENT
CARBON
CARRIERS
CHEMICAL REACTIONS
CRYSTAL DOPING
CRYSTALS
DEFECTS
IMPURITIES
INTERSTITIALS
ION BEAMS
ION CHANNELING
ION IMPLANTATION
LATTICES
MOTION
SILICON
TEMPERATURE
THALLIUM
SILICON/reactions between implanted substitutional thallium and silicon interstitials in
channeling study of replacement
(E)
THALLIUM/reactions between silicon interstitials and implanted substitutional
channeling study of replacement
(E)