Formation of stable dopant interstitials during ion implantation of silicon

Journal Article · Thu May 01 04:00:00 EDT 1986 · J. Mat. Res.; (United States)

DOI:https://doi.org/10.1557/JMR.1986.0476· OSTI ID:5819099

Pennycook, S J; Culbertson, R J; Narayan, J

High concentrations of self-interstitials are trapped by dopant atoms during ion implantation into Si. For group V dopants, these complexes are sufficiently stable to survive solid-phase-epitaxial (SPE) growth but break up on subsequent thermal processing and cause a transient-enhanced diffusion. Dopant diffusion coefficients are enhanced by up to five orders of magnitude over tracer values and are characterized by an activation energy of approximately one half of the tracer values. In the case of group III dopants, any complexes formed during implantation do not survive SPE growth but a second source of self-interstitials becomes significant and leads to similar transient effects. This is the damaged layer underlying the original amorphous/crystalline interface. These observations provide direct evidence for long-range self-interstitial migration in Si, and we believe these are the first observations of the interstitialcy diffusion mechanism with no vacancy contribution. We propose that the complexes are simply interstitial dopant atoms (in a split <100> interstitialcy configuration) that are particularly stable in the case of group V dopants. As they decay self-interstitials are released and cause the transient-enhanced diffusion.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5819099
• Journal Information: J. Mat. Res.; (United States), Journal Name: J. Mat. Res.; (United States) Vol. 1:3; ISSN JMREE
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ANTIMONY IONS
ARSENIC IONS
BISMUTH IONS
BORON IONS
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFUSION
DOPED MATERIALS
ELEMENTS
GALLIUM IONS
INTERSTITIALS
ION IMPLANTATION
IONS
MATERIALS
POINT DEFECTS
RECRYSTALLIZATION
SEMIMETALS
SILICON