Trapping of interstitials during ion implantation in silicon

Technical Report · Sun Jan 01 04:00:00 EST 1984

OSTI ID:6241561

Culbertson, R J; Pennycook, S J

The solid phase epitaxial regrowth of silicon implanted with a group V dopant, such as antimony, results in excellent incorporation of the dopant atoms into silicon lattice sites. However, annealing at higher temperatures or longer times results in transient dopant precipitation with a diffusion coefficient up to five orders of magnitude above that of tracer diffusion and with a reduced activation energy. This precipitation is accompanied by the nucleation of dislocation loops that are interstitial in nature, and the transient ceases as the dislocation loops develop. It is believed that Si interstitials are trapped in a stable defect complex during the implantation process. Although they survive SPE these complexes dissolve at higher temperatures and release a large supply of interstitials which serve to promote dopant migration via an interstitialcy mechanism until they condense to form the observed dislocation loops. By following the Sb implantation with an implantation of B to an equivalent concentration profile the loop formation is efficiently suppressed. For higher B concentrations the Sb precipitation is no longer observed. Results for As implantation are similar to Sb except that As precipitates cannot be directly observed. Calculations of the dopant and interstitial concentration depth distributions were also performed.

• Research Organization: Oak Ridge National Lab., TN (USA)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6241561
• Report Number(s): DOE/OR/21400-T227; ON: DE86006216
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANTIMONY IONS
ARSENIC IONS
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
DEPTH
DIMENSIONS
DISLOCATIONS
DOPED MATERIALS
ELEMENTS
INTERSTITIALS
ION IMPLANTATION
IONS
LINE DEFECTS
MATERIALS
POINT DEFECTS
SEMIMETALS
SILICON
TRAPPING