Point defect trapping in solid-phase epitaxially grown silicon-antimony alloys

Journal Article · Wed Feb 15 04:00:00 EST 1984 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.333179· OSTI ID:5222375

Pennycook, S J; Narayan, J; Holland, O W

Supersaturated silicon alloys produced by antimony implantation followed by solid-phase-epitaxial growth (furnace annealing), contain a supersaturation of interstitials. This is deduced from the observation of a transient, greatly enhanced diffusion of Sb into precipitates upon heating, accompanied by the formation of interstitial loops. In similar alloys produced by liquid-phase-epitaxial regrowth (pulsed laser annealing) much lower diffusion coefficients were obtained and no loops were observed. These observations provide clear evidence for the diffusion of the substitutional Sb dopant by an interstitialcy mechanism. The activation energy of the enhanced diffusion was 1.8 +- 0.2 eV, presumably corresponding to the migration enthalpy of Sb by the interstitialcy mechanism. The loop number density at the end of the transient gave an estimate of the initial interstitial concentration, which allowed the diffusivity of Sb by the interstitialcy mechanism to be estimated.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 5222375
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 55:4; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
360603* -- Materials-- Properties
ACTIVATION ENERGY
ALLOYS
ANNEALING
ANTIMONY
ANTIMONY IONS
ATOM TRANSPORT
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
DIFFUSION
DISLOCATIONS
DOPED MATERIALS
ELECTRON MICROSCOPY
ELEMENTS
ENERGY
ENERGY RANGE
EPITAXY
HEAT TREATMENTS
INTERSTITIALS
ION IMPLANTATION
IONS
LINE DEFECTS
LIQUID PHASE EPITAXY
MATERIALS
METALS
MEV RANGE
MEV RANGE 100-1000
MICROSCOPY
MIGRATION
NEUTRAL-PARTICLE TRANSPORT
POINT DEFECTS
RADIATION TRANSPORT
RECRYSTALLIZATION
SATURATION
SILICON ALLOYS
TRANSMISSION ELECTRON MICROSCOPY
TRAPPING
VERY HIGH TEMPERATURE