Point defect supersaturation and enhanced diffusion in SPE regrown silicon
Journal Article
·
· Mater. Res. Soc. Symp. Proc.; (United States)
OSTI ID:6873030
Transient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 +/- 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 +/- 0.2 eV, but no loops formed. 8 figures, 7 references.
- Research Organization:
- Oak Ridge National Lab., TN
- DOE Contract Number:
- W-7405-ENG-26
- OSTI ID:
- 6873030
- Journal Information:
- Mater. Res. Soc. Symp. Proc.; (United States), Journal Name: Mater. Res. Soc. Symp. Proc.; (United States) Vol. 27; ISSN MRSPD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
360106 -- Metals & Alloys-- Radiation Effects
ALLOYS
ANNEALING
ANTIMONY ALLOYS
ANTIMONY IONS
BISMUTH ALLOYS
BISMUTH IONS
CHARGED PARTICLES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DATA
DIFFUSION
EPITAXY
EXPERIMENTAL DATA
HEAT TREATMENTS
INFORMATION
ION IMPLANTATION
IONS
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
PNICTIDES
QUANTITY RATIO
RADIATION EFFECTS
SILICON ALLOYS
TRAPPING
360104* -- Metals & Alloys-- Physical Properties
360106 -- Metals & Alloys-- Radiation Effects
ALLOYS
ANNEALING
ANTIMONY ALLOYS
ANTIMONY IONS
BISMUTH ALLOYS
BISMUTH IONS
CHARGED PARTICLES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DATA
DIFFUSION
EPITAXY
EXPERIMENTAL DATA
HEAT TREATMENTS
INFORMATION
ION IMPLANTATION
IONS
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
PNICTIDES
QUANTITY RATIO
RADIATION EFFECTS
SILICON ALLOYS
TRAPPING