Ga segregation in DyBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}/PrBa{sub 2}Cu{sub 3{minus}x}Ga{sub x}O{sub 7{minus}{delta}}/DyBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} ramp-type Josephson junctions
- EMAT, University of Antwerp, B-2020 Antwerp (Belgium)
- Department of Applied Physics, University of Twente, 7500 AE Enschede (the Netherlands)
Ramp-type Josephson junctions with highly doped PrBa{sub 2}Cu{sub 3{minus}x}Ga{sub x}O{sub 7{minus}{delta}} barrier layers (x=0.7, 1.0) have been investigated by high-resolution electron microscopy. A Ga-rich intergrowth and Ga diffusion in the ion-milled SrTiO{sub 3} substrate are observed. The Ga segregation is responsible for the deviating electrical behavior as expected from extrapolation of low doping levels (x=0.1{endash}0.4). The Ga diffusion in the ion-milled substrate, and possibly in the base electrode, may hamper Josephson junction fabrication using substituted REBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} materials (RE=rare earth).{copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 467170
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 70; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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