VOLTAGE-ANNEALING OF RADIATION DAMAGE IN TUNNEL DIODES

Journal Article · Fri Mar 01 04:00:00 EST 1963 · Journal of Applied Physics (U.S.)

DOI:https://doi.org/10.1063/1.1729327· OSTI ID:4630486

Roth, H; Bernard, W; Zeldes, P; Schmid, A P

A unique radiation damage annealing process was observed at 78 deg K in tunnel diodes bombarded with highenergy electrons. Approximately one half of the radiationinduced excess current in germanium tunnel diodes can be permanently removed by application of forward bias voltages. This voltage-annealing effect arises from the enhanced migration of charged lattice defects under the influence of the high electric fields present in degenerate semiconductor junctions. A tentative model, based on known deep-lying radiation damage levels, is proposed. Under suitable conditions of forward bias, a charged interstitial can be dissociated from its adjacent paired vacancy, allowing the now isolated interstitial to be swept from the junction region with an estimated activation energy of 0.25 ev. (auth)

• Research Organization: Raytheon Research Div., Waltham, Mass.
• Sponsoring Organization: USDOE
• NSA Number: NSA-17-037577
• OSTI ID: 4630486
• Journal Information: Journal of Applied Physics (U.S.), Journal Name: Journal of Applied Physics (U.S.) Vol. Vol: 34; ISSN JAPIA
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

ACTIVATION ENERGY
ANNEALING
CURRENTS
DEFECTS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTRON BEAMS
ENERGY
EXCITATION
GERMANIUM
INTERSTITIALS
LATTICES
LOW TEMPERATURE
METALS, CERAMICS, AND OTHER MATERIALS
RADIATION EFFECTS
SEMICONDUCTORS
TUNNEL EFFECT
VACANCIES