A STUDY OF THE DYNAMIC CHARACTERISTICS OF THE TUNNEL DIODE AS AFFECTED BY ELECTRON BOMBARDMENT (thesis)
Technical Report
·
OSTI ID:4037480
Results of an investigation to determine the effects of electron bombardment on the dynamic negative resistance of tunnel diodes is presented. It was found that the negative resistance region of the diode decreases in extent and shifts toward lower bias levels while the diode is under bombardment. As the bombardment continues the permanent damage increases and the negative resistance region is entirely destroyed at an integrated dose of lO/sup 18/ electrons. It was also found that circuit oscillations could not be restarted when the. beam current reached a magnitude of 4 to 10 mu a. Temperature annealing of the diode may recover its negative resistance region to some extent. (J.R.D.)
- Research Organization:
- Air Force Inst. of Tech., Wright Patterson AFB, Ohio
- NSA Number:
- NSA-15-017066
- OSTI ID:
- 4037480
- Report Number(s):
- AD-246473
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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