ELECTRON BOMBARDMENT DAMAGE IN SILICON ESAKI DIODES

Journal Article · Sat Jul 01 04:00:00 EDT 1961 · Journal of Applied Physics (U.S.)

DOI:https://doi.org/10.1063/1.1736205· OSTI ID:4018727

Logan, R A; Augustyniak, W M; Gilbert, J F

The excess current in silicon Esaki diodes was shown to be a sensitive indicator of the density and distribution of states introduced into the forbidden gap by electron bombardment. Both the effects of bombardment and the annealing properties of the radiation damage were found to depend upon the specific donor in the n-type region of the diode. The average bombardment dose of 1-Mev electron/cm/sup 2/ needed to increase the excess current density by 1 amp/cm/sup 2/ at a bias of 0.3 v is 1.2 x 10/sup 16/ for P-doped diodes and 0.8 x 10/sup 16/ for Sb- or As-doped diodes. Upon annealing in an inert atmosphere, at temperature in the range 300 to 400 deg C, the bombarded diode is restored to its original characteristics. While the annealing studies reveal novel interactions, they show considerable similarity with other work where the radiation damage was monitored by carrier lifetime or conductivity measurements. Structures observed in the 1-V characteristics during the annealing indicate that the bombardment- induced levels at Ev + 0.27 and E/sub v/ + 0.06 are due to pairing of a primary defect (probably a vacancy) with an arsenic and a phosphorus impurity atom, respectively. (auth)

• Research Organization: Bell Telephone Labs., Inc., Murray Hill, N.J.
• Sponsoring Organization: USDOE
• NSA Number: NSA-15-025271
• OSTI ID: 4018727
• Journal Information: Journal of Applied Physics (U.S.), Journal Name: Journal of Applied Physics (U.S.) Vol. Vol: 32; ISSN JAPIA
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

ANTIMONY
ARSENIC
CARRIERS
CRYSTALS
CURRENTS
DEFECTS
DIODES
ELECTRIC CONDUCTIVITY
ELECTRON BEAMS
ELECTRON DONOR
ELECTRON TUBES
ENERGY LEVELS
IMPURITIES
INERT GASES
LATTICES
LIFETIME
MEASURED VALUES
METALS, CERAMICS, AND OTHER MATERIALS
PHOSPHORUS
RADIATION DOSES
RADIATION EFFECTS
SEMICONDUCTORS
SILICON
TEMPERATURE
TUNNEL EFFECT
VACANCIES