Radiation Induced Hump Structure in the I-V Characteristics of Esaki Diodes

Journal Article · Mon Jan 01 04:00:00 EST 1962 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1728577· OSTI ID:4764305

Pierce, C. B.; Sander, H. H.; Kantz, A. D.

Well-defined hump structure is produced in the excess current region of Si, Ge, and GaAs Esaki diodes by irradiation with 2-Mev electrons, when the I-V characteristic is observed at low temperature. Si diodes develop humps at 77 to 300 deg K. Ge diodes show humps at 0.23 and 0.51 v when irradiated at low temperature, but only a hump at 0.23 v after room temperature irradiation. GaAs diodes show humps at approximately 0.4 and 0.9 v. Diodes of approximately one ma peak current generally show hump current changes comparable to the peak current with an integrated flux of approximately 10¹⁷ electrons/cm². On the basis of a simple model postulating direct tunneling of electrons from the conduction band of the n material to defect levels in the p material, defect levels in Ge and Si are located. The first two humps in Si anneal from slightly above room temperature to above 250 deg C. The third hump does not anneal significantly to 250 deg C. The two humps produced on low temperature irradiation of Ge anneal rapidly just below 0 deg C, while a third hump at 0.60 v appears in this temperature range. Hump structure produced or remalning in Ge at room temperature is stable to above 100 deg C, where annealing takes place with second- order kinetics and apparently goes to completion.

• Research Organization: Sandia Lab., Albuquerque, N. Mex.
• Sponsoring Organization: USDOE
• NSA Number: NSA-16-033535
• OSTI ID: 4764305
• Report Number(s): TID-15456; 0021-8979
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 33; ISSN JAPIAU; ISSN 0021-8979
• Publisher: American Institute of Physics (AIP)
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ARSENIC COMPOUNDS
CURRENTS
DEFECTS
DIODES
DISTRIBUTION
ELECTRIC POTENTIAL
ELECTRON TUBES
ENERGY LEVELS
GALLIUM COMPOUNDS
GERMANIUM
IRRADIATION
LATTICES
LOW TEMPERATURE
RADIATION EFFECTS
SEMICONDUCTORS
SILICON
STABILITY
TEMPERATURE
TUNNEL EFFECT