FAST NEUTRON BOMBARDMENT OF GERMANIUM AND SILICON ESAKI DIODES

Journal Article · Sat Oct 01 04:00:00 EDT 1960 · Journal of Applied Physics (U.S.)

DOI:https://doi.org/10.1063/1.1735445· OSTI ID:4123223

Easley, J W; Blair, R R

The fast-neutron irradiation behavior of germanium and silicon Esaki diodes was experimentally examined. The domainant change produced was an increase in the "excess" current which was proportional to integratsd neutron flux. The observed increase in the vicinity of the current minimum was approximately 2.6 x 10/sup -15/ and 1.1 x 10/sup -14/ amp/ fast neutron for gemanium and silicon diodes, respectively. Substantial changes resulted in the voltage-current characteristics of the diodes employed in the decade of exposure between 1O/sup 16/ to 10/sup 17/ fast neutrons/cm/sup 2/ for germanium diodes and between 10/sup 15/to 1O/sup 16/ fast neutrons/cm/sup 2/ for silicon diodes. One kilomegacycle cavity oscillators employing germanium diodes exhibited a marked reduction in power output in the decade of exposure between l0/sup 16/ to lO/sup 17/ fast neutrons/cm/sup 2/. The magnitude of the decrease was in approximate agreement with the observed bombardment reduction of diode negative conductance. (auth)

• Research Organization: Bell Telephone Labs., Inc., Whippany, N.J.
• Sponsoring Organization: USDOE
• NSA Number: NSA-15-000727
• OSTI ID: 4123223
• Journal Information: Journal of Applied Physics (U.S.), Journal Name: Journal of Applied Physics (U.S.) Vol. Vol: 31; ISSN JAPIA
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

CURRENTS
DIODES
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRON TUBES
FAST NEUTRONS
GERMANIUM
METALS, CERAMICS, AND OTHER MATERIALS
OSCILLATIONS
RADIATION DOSES
SEMICONDUCTORS
SILICON
TUNNEL EFFECT