P-N JUNCTION FORMATION TECHNIQUES. Quarterly Technical Progress Report No. 3, May 20, 1963-September 1, 1963

Technical Report · Thu Oct 31 04:00:00 EST 1963

OSTI ID:4629055

Investigations were continued on spectral response as a function of junction depth in p-on-n-type cells. A further blue shift was observed with lower implantation energy (100 kev), the equal photon relative response curve peaking at 6000 A. Graphically deterrnined values of minority carrier diffusion lengths in the surface region show a trend towards values equalling junction depth for low-energy implanted cells. Base diffusion lengths ( approximates 40 mu ) indicate a need for better starting material to obtain more efficient cells. An empirical curve that gives the relative efficiencies under solar and tungsten light (140 Mw/cm/sup 2/ incident) as a function of implantation energy was obtained. This curve shows good agreement with values predicted from spectral response curves. Results of profile investigations were inconclusive due to sheet resistance, contact resistance and forward leakage effects. In general, cells with drift fields in the surface region had higher efficiencies than linear profile cells. P-type-cells were implanted with phosphorous ions to make n-on-p cells. The first cells produced in this manner had efficiencies greater than 5% and spectral responses sirnilar to comparable p-on-n cells. Preliminary radiation damage studies on IPC and commercial cells were in sharp disagreement with results of other workers. This was apparently due to environmental effects on radiation damage rates, but further effort is required to obtain definite conclusions. (auth)

• Research Organization: Ion Physics Corp., Burlington, Mass.
• NSA Number: NSA-17-041521
• OSTI ID: 4629055
• Report Number(s): AD-419705
• Country of Publication: United States
• Language: English

Related Subjects

CONFIGURATION
CRYSTAL COUNTERS
DIFFUSION LENGTH
EFFICIENCY
IONS
LIGHT
MEASURED VALUES
P-N COUNTERS
PHOSPHORUS
PHOTONS
PHYSICS
RESISTORS
SEMICONDUCTORS
SPECTRA
SUN
SURFACES
TUNGSTEN