SOLAR CELL DEGRADATION UNDER 1-Mev ELECTRON BOMBARDMENT

Journal Article · Fri Mar 01 04:00:00 EST 1963 · Bell System Tech. J.

DOI:https://doi.org/10.1002/j.1538-7305.1963.tb00506.x· OSTI ID:4133542

Rosenzweig, W; Gummel, H K; Smits, F M

The effects of radiation damage on the important parameters of solar cells was evaluated for groups of bluesensitive n-on-p, normal p-on-n, and blue- sensitive p-on-n cells using 1-Mev electrons. The outer space short circuit current, maximum power, junction characteristic, and spectral response are presented quantitatively as a function of radiation flux along with the bulk minority-carrier diffusion length. The rate of change of inverse squared diffusion length with flux was found to be 1.22 x 10/sup -8/ for the p-on-n cells, as compared to 1.7 x 10/sup -10/ for the n-on-p. The degradation of the spectral response was consistent with the measured diffusion length for both types of cells if a total effective front layer of 1 mu thickness is assumed for the p-on-n cells. As a result of the less rapid degradation of their minority-carrier lifetime, the n-on-p cells exhibit a greater resistance to radiation than the p-on-n cells. Comparing only the two types of blue-sensitive cells, after prolonged bombardment, the flux ratios required to achieve equal values of short-circuit current and maximum power are 17 and 9.5, respectively. (auth)

• Research Organization: Originating Research Org. not identified
• Sponsoring Organization: USDOE
• NSA Number: NSA-18-005820
• OSTI ID: 4133542
• Journal Information: Bell System Tech. J., Journal Name: Bell System Tech. J. Vol. Vol: 42
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

BATTERIES
CURRENTS
DECOMPOSITION
ELECTRIC CHARGES
ELECTRONS
METALS, CERAMICS, AND OTHER MATERIALS
PHOTOELECTRIC CELLS
POWER
RADIATION EFFECTS
SEMICONDUCTORS
SENSITIVITY
SOLAR CELLS
SPECTRA
SUN