Analysis of light-induced degradation in amorphous silicon alloy p-i-n solar cells

Journal Article · Thu Aug 15 04:00:00 EDT 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.336056· OSTI ID:5584062

Hack, M; Shur, M

We present results of computer simulations of the characteristics of amorphous silicon alloy p-i-n solar cells in both undegraded and degraded conditions for illumination through the n/sup +/ or p/sup +/ layers. Changes in device performance upon degradation correlate well with realistic changes in the minority carrier diffusion length of the intrinsic layer. The results of our model are in good agreement with experimental data and lead us to conclude that the observed degradation in the electronic properties of amorphous silicon alloys are only consistent with the observed increases in the localized state density if the photoinduced metastable defects have larger capture cross sections than the localized states in as-deposited material. The analysis of recombination losses shows that upon degradation, primarily because of the decrease in the minority carrier diffusion length, cells illuminated through the n/sup +/ layer exhibit a loss of short-wavelength response whereas those illuminated through the p/sup +/ layer exhibit a loss of long-wavelength response.

• Research Organization: Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
• OSTI ID: 5584062
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:4; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
CARRIER DENSITY
COMPUTERIZED SIMULATION
DIFFUSION
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
ENERGY LEVELS
EQUIPMENT
EXCITED STATES
JUNCTIONS
LAYERS
METASTABLE STATES
P-N JUNCTIONS
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
PHYSICAL PROPERTIES
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
SILICON SOLAR CELLS
SIMULATION
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRAL RESPONSE