Implications of light-induced defects on the performance of amorphous silicon alloy p-i-n solar cells

Journal Article · Sat Mar 15 04:00:00 EST 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.336363· OSTI ID:5992128

Hack, M; Shur, M

We present results of computer simulations of the performance of amorphous silicon alloy p-i-n solar cells upon prolonged light exposure, for a range of device thicknesses for illumination through both the n/sup +/ and p/sup +/ layer. Our model realistically describes the dominant loss mechanisms in these devices, which are shown to be bulk recombination. We show how an understanding of the light-induced degradation can lead to designing cells with improved stability by suitable modifications to the optical absorption characteristics of the intrinsic layer near to where light enters the device. Finally, by relating defect creation to the minority-carrier diffusion length, we have calculated solar cell performance versus time in the absence of annealing for a range of device thicknesses for global AM1.5 illumination through both the n/sup +/ and p/sup +/ layers.

• Research Organization: Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
• OSTI ID: 5992128
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 59:6; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
ANNEALING
CARRIER MOBILITY
CHARGE CARRIERS
COMPUTERIZED SIMULATION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
EQUIPMENT
HEAT TREATMENTS
JUNCTIONS
MOBILITY
OPACITY
OPTICAL PROPERTIES
P-N JUNCTIONS
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
SILICON SOLAR CELLS
SIMULATION
SOLAR CELLS
SOLAR EQUIPMENT