Physics of amorphous silicon alloy p-i-n solar cells
Journal Article
·
· J. Appl. Phys.; (United States)
We present a comprehensive computer simulation of amorphous silicon alloy p-i-n solar cells which has enabled us to establish the physical mechanisms governing device operation. This has been carried out by analyzing the free-carrier, space-charge, recombination rate, and electric field profiles as well as the corresponding current-voltage characteristics for a variety of device parameters and illumination conditions. We interpret these results in terms of the asymmetrical density of localized states in these alloys and its effect on the basic recombination paths. We also demonstrate that for uniformly absorbed light, cell performance is primarily controlled by the hole transport properties, and not by the sum of the carrier drift lengths, or their mobility-lifetime products. This concept of a ''limiting carrier'' also applies to the case of nonuniform illumination. Photovoltaic performance is calculated both as a function of device thickness as well as material quality. Finally, we compare the results from our simulation with those obtained from other models for these devices.
- Research Organization:
- Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
- OSTI ID:
- 5659075
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:2; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Analysis of light-induced degradation in amorphous silicon alloy p-i-n solar cells
The role of boron profiling in enhancing the performance of amorphous silicon based alloy P-I-N solar cells
Implications of light-induced defects on the performance of amorphous silicon alloy p-i-n solar cells
Journal Article
·
Thu Aug 15 00:00:00 EDT 1985
· J. Appl. Phys.; (United States)
·
OSTI ID:5584062
The role of boron profiling in enhancing the performance of amorphous silicon based alloy P-I-N solar cells
Conference
·
Tue May 01 00:00:00 EDT 1984
· Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
·
OSTI ID:5902868
Implications of light-induced defects on the performance of amorphous silicon alloy p-i-n solar cells
Journal Article
·
Fri Mar 14 23:00:00 EST 1986
· J. Appl. Phys.; (United States)
·
OSTI ID:5992128
Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
CHARGE CARRIERS
CHARGED-PARTICLE TRANSPORT THEORY
COMPUTERIZED SIMULATION
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRICAL PROPERTIES
EQUIPMENT
HOLES
JUNCTIONS
OPERATION
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
SILICON SOLAR CELLS
SIMULATION
SOLAR CELLS
SOLAR EQUIPMENT
TRANSPORT THEORY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
CHARGE CARRIERS
CHARGED-PARTICLE TRANSPORT THEORY
COMPUTERIZED SIMULATION
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRICAL PROPERTIES
EQUIPMENT
HOLES
JUNCTIONS
OPERATION
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
SILICON SOLAR CELLS
SIMULATION
SOLAR CELLS
SOLAR EQUIPMENT
TRANSPORT THEORY