Photocurrent Enhancement Induced By Interface Modifications Due To Low Dose Electron Irradiation Of Amorphous/Crystalline Silicon Heterojunctions

Journal Article · Mon Jan 04 04:00:00 EST 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3295356· OSTI ID:21371392

Neitzert, Heinz-Christoph; Ferrara, Manuela ^[1]; Fahrner, Wolfgang; Scherff, Maximilian ^[2]; Klaver, Arjen; Swaaij, Rene van ^[3]

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1. DIIIE, Universita di Salerno, Via Ponte Don Melillo 1, 84084 Fisciano (Saudi Arabia) (Italy)
2. Chair of Electronic Devices, University Hagen, Haldener Str. 182, 58084 Hagen (Germany)
3. DIMES-ECTM, Delft University of Technology, P.O. Box 5053, 2600 GB Delft (Netherlands)

A series of n-type amorphous silicon/p-type crystalline silicon solar cells has been exposed to different fluences of 1 MeV electrons. For intermediate fluences up to 1.10{sup 13} electrons/cm{sup 2}, an enhancement of the spectral response at shorter wavelengths and a increase of the short circuit current has been observed, while for higher fluences the usual device degradation due to the decrease of the charge carrier diffusion length in the crystalline silicon base after irradiation has been found.

• OSTI ID: 21371392
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1199; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
BEAMS
CHARGE CARRIERS
CRYSTALS
DIFFUSION LENGTH
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELECTRON BEAMS
ELEMENTS
ENERGY RANGE
EQUIPMENT
HETEROJUNCTIONS
INTERFACES
IRRADIATION
LENGTH
LEPTON BEAMS
MATERIALS
MEV RANGE
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PARTICLE BEAMS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRAL RESPONSE