The effects of junction depth and impurity concentration on ion-implanted, junction solar cells
Conference
·
· Alternative Energy Sources; (United States)
OSTI ID:6888729
This paper presents data resulting from tests on the experimental optimization of the ion-implanted region of horizontal junction, silicon, ion-implanted P+N and N+P solar cells. The experimental data are compared to theoretical predictions based on a simple model and to data obtained with diffused junction solar cells (1). Optimum junction depth and average ion-implanted layer concentration for ion-implanted, silicon, PN junction solar cells under non-concentrated sunlight (approximately AMI conditions) appear to be 0.5..mu..m and 5X10/sup 18/ atoms/cm/sup 3/, respectively. Variation in solar cell efficiency with junction depth is rapid between 0.1 and 0.5..mu..m. Variations of efficiency in response to changes in concentration are minimal over the range tested. Experiments under various illumination conditions indicate increasing efficiency as insolation increases from 83mw/cm/sup 2/ to 100 mw/cm/sup 2/. Comparison with diffused junction, silicon solar cells indicates a potentially greater efficiency for ion-implanted solar cells. However, variation in efficiency between individual solar cells is sufficiently great to warrant further experimentation before reaching any final conclusions.
- Research Organization:
- College of Engineering and Technology Northern Arizona University Box 15600 Flagstaff, Arizona
- OSTI ID:
- 6888729
- Report Number(s):
- CONF-801210-
- Conference Information:
- Journal Name: Alternative Energy Sources; (United States) Journal Volume: 3
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
BENCH-SCALE EXPERIMENTS
COMPARATIVE EVALUATIONS
DATA
DEPTH
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
EXPERIMENTAL DATA
ILLUMINANCE
IMPURITIES
INFORMATION
INSOLATION
ION IMPLANTATION
JUNCTIONS
NUMERICAL DATA
OPTIMIZATION
P-N JUNCTIONS
PERFORMANCE TESTING
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RADIATIONS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SOLAR RADIATION
STELLAR RADIATION
TESTING
THEORETICAL DATA
VARIATIONS
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
BENCH-SCALE EXPERIMENTS
COMPARATIVE EVALUATIONS
DATA
DEPTH
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
EXPERIMENTAL DATA
ILLUMINANCE
IMPURITIES
INFORMATION
INSOLATION
ION IMPLANTATION
JUNCTIONS
NUMERICAL DATA
OPTIMIZATION
P-N JUNCTIONS
PERFORMANCE TESTING
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RADIATIONS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SOLAR RADIATION
STELLAR RADIATION
TESTING
THEORETICAL DATA
VARIATIONS