Gallium arsenide solar cells obtained by ion bombardment

Journal Article · Wed Jan 01 04:00:00 EST 1975 · Appl. Solar Energy (USSR) (Engl. Transl.); (United States)

OSTI ID:7177558

Gavrilov, A A; Kachurin, G A; Smirnov, L S

The characteristics of solar cells obtained by cadmium and zinc ion implantation in the n-region were investigated. The cadmium-doped cells were found to have higher losses due to the higher p-layer resistance and surface recombination of the generated carriers. High recombination losses are connected with incomplete annealing of defects and the small depth of the p-n junction. The latter is due to the relatively low rate of diffusion of cadmium and the capture of the impurity by the disturbed layer. Zinc-ion implantation has resulted in a substantial increase in the conductivity of the p-layer and, because of the higher diffusion coefficient, in a shift of the p-n junction away from the illuminated surface. The solar cells produced in this way have been found to have characteristics similar to those of diffusion junctions and high efficiencies (9.0 to 9.5 percent without transparent coatings). Suggestions are given for further improvements in the parameters of solar cells produced by ion implantation.

• OSTI ID: 7177558
• Journal Information: Appl. Solar Energy (USSR) (Engl. Transl.); (United States), Journal Name: Appl. Solar Energy (USSR) (Engl. Transl.); (United States) Vol. 11:5/6; ISSN ASOEA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CADMIUM
DIFFUSION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
ION IMPLANTATION
METALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SOLAR CELLS
ZINC