Ion-implanted GaAs JFETs with f{sub t} {gt} 45 GHz for low-power electronics
Conference
·
OSTI ID:460770
- Sandia National Labs., Albuquerque, NM (United States)
GaAs Junction Field Effect Transistors (JFETs) are reported with gate lengths down to 0.3 micrometers. The structure is fully self-aligned and employs all ion implantation doping. p[sup +]-gate regions are formed with either Zn or Cd implants along with a P coimplantation to reduce diffusion. The source and rain implants are engineered with Si or SiF implants to minimize short channel effects. JFETs with 0.3 micrometer gate length are demonstrated with a sub-threshold slope of 110 mV/decade along with an intrinsic unity current gain cutoff frequency as high as 52 GHz.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Financial Management and Controller, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 460770
- Report Number(s):
- SAND--96-2493C; CONF-961127--1; ON: DE97000743
- Country of Publication:
- United States
- Language:
- English
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Journal Article
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Fri Jul 01 00:00:00 EDT 1994
· IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)
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OSTI ID:6913417