Effects of electron irradiation and temperature on 1- and 10-ohm-cm silicon solar cells
Technical Report
·
OSTI ID:4367178
One ohm-cm and 10 ohm-cm silicon solar cells were exposed to 1.0 MeV electrons at a fixed fluence of 10/sup 11/ e/cm/sup 2//s and a flux of 10/sup 13/ , 10/sup 14/, and 1O/sup 15/ e/cm/sup 2/. 1-V curves of the cells w ere made at room temperature, --63 deg C and plus or minus 143 deg C after each irradiation. A value of 139.5 MW/cm/sup 2/ was used as AMO incident energy rate per unit area. The 10-ohm-cm cells appear more efficient than 1 ohmcm cells after exposure to a fluence > 10/sup 14/e/cm/sup 2/. The 1.0 Mev electron damage coefficeints for both 1 ohm-cm and 10 ohm-cm cells are somewhat less than those for previously irradiated cells at room temperasture. The values of the damage coefficients increase as the cell temperatures decrease. Efficiencies pertaining to maximum power output are about the same as those of n on p silicon cells evaluated previously. (auth)
- Research Organization:
- National Aeronautics and Space Administration, Greenbelt, Md. (USA). Goddard Space Flight Center
- NSA Number:
- NSA-29-007837
- OSTI ID:
- 4367178
- Report Number(s):
- N--73-21083; NASA-TM-X--66231
- Country of Publication:
- United States
- Language:
- English
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