Radiation damage and annealing of amorphous silicon solar cells

Conference · Tue May 01 00:00:00 EDT 1984 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:6025657

Byvik, C E; Buoncristiani, A M; Slemp, W S; Smith, B T

Amorphous silicon solar cells were irradiated with 1 MeV electrons at the Space Environmental Effects Laboratory of the NASA Langley Research Center. The cells accumulated a total fluence of 10/sup 14/, 10/sup 15/, and 10/sup 16/ electrons per square centimeter and exhibited increasing degradation with each irradiation. This degradation was tracked by evaluating the I-V curves for AMO illumination and the relative spectral response. The observed radiation damage was reversed following an anneal of the cells under vacuum at 200 C for 2 hours.

• Research Organization: NASA Langley Research Center Hampton, Virginia
• OSTI ID: 6025657
• Report Number(s): CONF-840561-
• Journal Information: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States); ISSN CRCND
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
ANNEALING
BEAMS
DAMAGE
DIRECT ENERGY CONVERTERS
ELECTROMAGNETIC RADIATION
ELECTRON BEAMS
ELEMENTS
EQUIPMENT
FABRICATION
HEAT TREATMENTS
IRRADIATION
LABORATORIES
LEPTON BEAMS
PARTICLE BEAMS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RADIATION EFFECTS
RADIATIONS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRAL RESPONSE
THERMAL DEGRADATION
THERMAL RADIATION
VACUUM STATES