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Charged particle damage in wrap-around solar cells

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:7257651
The photovoltaic parameters of wrap-around junction cells were measured with an air-mass-zero (AMO) solar simulator as a function of fluence and temperature before and after 1.0-MeV electron and 5.0-MeV proton irradiations. These cells behaved in a similar fashion to planar junction cells with respect to their radiation-dependence. Their maximum power (P/sub max/) degradation is 36% at 2 x 10/sup 15/ e/cm/sup 2/, which is slightly less than for planar junction cells. After that point they degrade at an accelerated rate of 5.2 mW/cm/sup 2/ per decade of fluence. It was also shown that sequential irradiations of protons and electrons produced equivalent gradation of all photovoltaic output parameters irrespective of the order in which the irradiations were performed. A simple first order theory was developed which accounts for the degradation in short-circuit current caused by non-uniform radiation damage distribution resulting from 5-MeV protons in silicon. Predictions by this model show adequate agreement with experimental data for short-circuit current (I/sub sc/) and relative spectral response for proton irradiation normal either to the front or to the rear of the cell.
Research Organization:
Naval Research Lab., Washington, DC
OSTI ID:
7257651
Conference Information:
Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-23:6
Country of Publication:
United States
Language:
English