Charged particle damage in wrap-around solar cells
Conference
·
· IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:7257651
The photovoltaic parameters of wrap-around junction cells were measured with an air-mass-zero (AMO) solar simulator as a function of fluence and temperature before and after 1.0-MeV electron and 5.0-MeV proton irradiations. These cells behaved in a similar fashion to planar junction cells with respect to their radiation-dependence. Their maximum power (P/sub max/) degradation is 36% at 2 x 10/sup 15/ e/cm/sup 2/, which is slightly less than for planar junction cells. After that point they degrade at an accelerated rate of 5.2 mW/cm/sup 2/ per decade of fluence. It was also shown that sequential irradiations of protons and electrons produced equivalent gradation of all photovoltaic output parameters irrespective of the order in which the irradiations were performed. A simple first order theory was developed which accounts for the degradation in short-circuit current caused by non-uniform radiation damage distribution resulting from 5-MeV protons in silicon. Predictions by this model show adequate agreement with experimental data for short-circuit current (I/sub sc/) and relative spectral response for proton irradiation normal either to the front or to the rear of the cell.
- Research Organization:
- Naval Research Lab., Washington, DC
- OSTI ID:
- 7257651
- Conference Information:
- Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-23:6
- Country of Publication:
- United States
- Language:
- English
Similar Records
Anomalous effects in silicon solar cell irradiated by 1-MeV protons
Intrinsic radiation tolerance of ultra-thin GaAs solar cells
Electron-irradiated two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells and annealing of radiation damage
Journal Article
·
Fri Sep 15 00:00:00 EDT 1989
· Journal of Applied Physics; (USA)
·
OSTI ID:5624599
Intrinsic radiation tolerance of ultra-thin GaAs solar cells
Journal Article
·
Mon Jul 18 00:00:00 EDT 2016
· Applied Physics Letters
·
OSTI ID:22594430
Electron-irradiated two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells and annealing of radiation damage
Conference
·
Thu Sep 01 00:00:00 EDT 1994
·
OSTI ID:36427
Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BARYONS
CHARGED PARTICLES
COVERINGS
DIRECT ENERGY CONVERTERS
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
HADRONS
LEPTONS
MATHEMATICAL MODELS
NUCLEONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL RADIATION EFFECTS
PROTONS
RADIATION EFFECTS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR SIMULATORS
TESTING
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BARYONS
CHARGED PARTICLES
COVERINGS
DIRECT ENERGY CONVERTERS
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
HADRONS
LEPTONS
MATHEMATICAL MODELS
NUCLEONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL RADIATION EFFECTS
PROTONS
RADIATION EFFECTS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR SIMULATORS
TESTING