Electron-bombardment-induced annealing stages in n-type germanium. 2

Journal Article · Sun Jul 01 04:00:00 EDT 1973 · Jap. J. Appl. Phys., v. 12, no. 7, pp. 957-961

OSTI ID:4349728

Hirata, M

Annealing stages in n-type germanium bombarded with electrons have been investigated. In isothermal annealing curves it has often been found that the apparent number of defects that rccover at a given annealing stage is temperature- dependent. The physics of this phenomenon can not be understood simply. In order to give somc physical meaning to this phenomenon. an armealing model is proposed. In this model, one type of defect is assumed to be annihilated by two annihilation processes that occur nearly simultaneously. One of the processes can be observed by measuring electric resistivity, but the other is assumed to be unobservable. It is further assumed that these processes have different activation energies. (auth)

• Research Organization: Osaka Univ., Toyonaka, Japan
• NSA Number: NSA-29-021581
• OSTI ID: 4349728
• Journal Information: Jap. J. Appl. Phys., v. 12, no. 7, pp. 957-961, Journal Name: Jap. J. Appl. Phys., v. 12, no. 7, pp. 957-961; ISSN JJAPA
• Country of Publication: Japan
• Language: English

Related Subjects

*GERMANIUM-- PHYSICAL RADIATION EFFECTS
ACTIVATION ENERGY
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRON BEAMS
MEV RANGE 01-10
MONOCRYSTALS
N-TYPE CONDUCTORS
N50240* --Metals
Ceramics
& Other Materials--Metals & Alloys--Radiation Effects
POINT DEFECTS
TEMPERATURE DEPENDENCE