ANNEALING OF $gamma$-RAY IRRADIATED N-TYPE GERMANIUM
Journal Article
·
· Phys. Chem. Solids
Isochronal and isothermal annealing above room temperature was studied in antimony and arsenic doped gamma irradiated germanium. Three annealing stages are found at ev, 1.2 to 1.3 ev and 2.2 (As-doped) to 2.5 (Sb-doped) ev, respectively. Impurity dependence of annealing behavior is found in all these stages. The results are discussed in terms of electronic and elastic interactions of defect centers with impurity atoms. (auth)
- Research Organization:
- Tokyo Univ.
- NSA Number:
- NSA-17-036361
- OSTI ID:
- 4662059
- Journal Information:
- Phys. Chem. Solids, Journal Name: Phys. Chem. Solids Vol. Vol: 24
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Similar Records
RADIATION-INDUCED RECOMBINATION AND TRAPPING CENTERS IN GERMANIUM. II. ANNEALING IN GAMMA-IRRADIATED, ANTIMONY-, AND ARSENICDOPED MATERIAL
Changes in radiation defects caused by annealing at 220 /sup 0/K of germanium irradiated with fast electrons at 77 /sup 0/K
Capacitance spectroscopy of. gamma. radiation defects in n-type germanium
Journal Article
·
Tue May 15 00:00:00 EDT 1962
· Physical Review (U.S.) Superseded in part by Phys. Rev. A, Phys. Rev. B: Solid State, Phys. Rev. C, and Phys. Rev. D
·
OSTI ID:4838605
Changes in radiation defects caused by annealing at 220 /sup 0/K of germanium irradiated with fast electrons at 77 /sup 0/K
Journal Article
·
Sat Jul 01 00:00:00 EDT 1978
· Sov. Phys. - Semicond. (Engl. Transl.); (United States)
·
OSTI ID:6783290
Capacitance spectroscopy of. gamma. radiation defects in n-type germanium
Journal Article
·
Wed Feb 29 23:00:00 EST 1984
· Sov. Phys. - Semicond. (Engl. Transl.); (United States)
·
OSTI ID:6787821