RADIATION-INDUCED RECOMBINATION AND TRAPPING CENTERS IN GERMANIUM. II. ANNEALING IN GAMMA-IRRADIATED, ANTIMONY-, AND ARSENICDOPED MATERIAL

Journal Article · Tue May 15 00:00:00 EDT 1962 · Physical Review (U.S.) Superseded in part by Phys. Rev. A, Phys. Rev. B: Solid State, Phys. Rev. C, and Phys. Rev. D

DOI:https://doi.org/10.1103/PhysRev.126.1342· OSTI ID:4838605

Curtis, Jr, O L; Crawford, Jr, J H

An investigation has been made of the annealing properties of radiation- induced recombination centers in germanium. The annealing behavior of artimony- doped germanium is grossly different from that of arsenic-doped material. The experimental observations are explained on the following basis: The recombination level at 0.36 ev above the valence band belongs to the vacancy. In antimonydoped material the vacancy disappears by association with an antimony atom. This process does not occur in arsenicdoped material, and higher temperatures are required to produce annealing. It is thought that a trapping level, present only in arsenic-doped material, located 0.10 ev above the valence band might be due to an arsenic-interstitial pair. (auth)

• Research Organization: Oak Ridge National Lab., Tenn.
• NSA Number: NSA-16-021187
• OSTI ID: 4838605
• Journal Information: Physical Review (U.S.) Superseded in part by Phys. Rev. A, Phys. Rev. B: Solid State, Phys. Rev. C, and Phys. Rev. D, Vol. Vol: 126; Other Information: Orig. Receipt Date: 31-DEC-62
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

PHYSICS
ANNEALING
ANTIMONY
ARSENIC
CARRIERS
DEFECTS
ELECTRONS
ENERGY LEVELS
GAMMA RADIATION
GERMANIUM
IRRADIATION
TEMPERATURE
TRAPS
VALENCE