IRRADIATION AND ANNEALING BEHAVIOR OF n-TYPE GERMANIUM AND n-TYPE SILICON

Journal Article · Fri Mar 01 04:00:00 EST 1963 · J. Phys. Soc. Japan

OSTI ID:4636105

Wikner, E G; Horiye, H; Harrity, J W

Studies were made on the radioinduced changes in the conductivity and Hall coefficient of n-type germanium and n-type silicon. The irradiations were performed at 80 deg K using 5, 15, and 45-Mev electrons. The number of defects formed, as measured by the observed carrier removal rates, depend logarithmically on the irradiation energy as predicted by the Seitz-Koehler model. Strong annealing processes were found to occur between 80 and 350 deg K. The processes were distinct from annealing occurring after lower energy irradiations. The annealing processes also depended on the amount of irradiation the sample receives. Studies were also made on the effects of the electron bombardment rate at 30 Mev. None was observed initially although longer irradiations exhibited some differences. (auth)

• Research Organization: General Atomic Div., General Dynamics Corp., San Diego, Calif.
• NSA Number: NSA-17-037606
• OSTI ID: 4636105
• Journal Information: J. Phys. Soc. Japan, Journal Name: J. Phys. Soc. Japan Vol. Vol: 18: Suppl. III
• Country of Publication: Country unknown/Code not available
• Language: English

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